| 摘要 |
PURPOSE: A target and a manufacturing method thereof, and a memory and a manufacturing method thereof are provided to enable a layer, including a high-melting point of metal element and chalcogens element and other metal elements, to be formed by sputtering using one target. CONSTITUTION: A target consists of one or more metal elements with a high-melting point, which are selected from Ti, Zr, Hf, V, Nb, Ta, Lanthanoids, one or more elements, which are selected from Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, Ga, and one or more chalcogens elements, which are selected from S, Se, Te. |
