发明名称 DIFFUSION BONDING CIRCUIT SUBMOUNT DIRECTLY TO VAPOR CHAMBER
摘要 <p>PURPOSE: A method for providing a thermal conductive path, and an intermediate assembly and an assembly formed by the same are provided to obtain the high in-plane thermal conductivity and the through-plane thermal conductivity between an electronic device and a heat sink. CONSTITUTION: A vapor chamber(12) which is thermal coupled with a heat sink is prepared. The vapor chamber includes an upper shell(14) and a bottom plate(16). The bottom plate includes a flange(18) with a bolt hole(20) in order to fix the vapor chamber using the heat sink. An insulating body(24) includes a patterned upper metalized layer and bottom metalized layer in order to be in contact with the electrode of an electronic device. The bottom metalized layer of the insulating body is diffusion-bonded with the upper side of the vapor chamber under heat and pressure.</p>
申请公布号 KR20110011492(A) 申请公布日期 2011.02.08
申请号 KR20090108033 申请日期 2009.11.10
申请人 DSEM HOLDINGS SDN. BHD. 发明人 TAN KIA KUANG;TEOH WAH SHENG
分类号 H01L23/34;F28D15/02;G06F1/20;H05K7/20 主分类号 H01L23/34
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