| 发明名称 |
Semiconductor device and method for manufacturing the same |
| 摘要 |
A semiconductor device includes an Nch transistor having a first gate electrode and a Pch transistor having a second gate electrode. The first gate electrode and the second gate electrode are made of materials causing stresses of different magnitudes.
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| 申请公布号 |
US7884428(B2) |
申请公布日期 |
2011.02.08 |
| 申请号 |
US20080062072 |
申请日期 |
2008.04.03 |
| 申请人 |
PANASONIC CORPORATION |
发明人 |
YOSHIDA YOICHI;KANEGAE KENSHI |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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