| 摘要 |
A semiconductor integrated circuit according to an example of the present invention includes a semiconductor substrate, an element isolation insulating layer formed in a surface region of the semiconductor substrate, and first and second MIS type devices isolated from each other by the element isolation insulating layer and formed in adjacent first and second element regions in a second direction orthogonal to a first direction. Each of the first and second MIS type devices has a stack gate structure having a floating gate and a control gate electrode. The first MIS type device functions as an aging device, and the second MIS type device functions as a control device which controls an electric charge retention characteristic of the aging device.
|
