| 摘要 |
<p>A film formation treatment is carried out in a film formation chamber (13a, 13b), wherein the film formation treatment comprises forming a thin tungsten film selectively on an area of a substrate (S) which has higher electrical conductivity than that of other area of the substrate (S) using a tungsten hexafluoride gas and a monosilane gas. Subsequent to the film formation treatment, a cleaning treatment is carried out, wherein the cleaning treatment comprises cleaning the inside of the film formation chamber (13a, 13b) with a fluorine-containing cleaning gas. The film formation treatment and the cleaning treatment are carried out alternately in a repeated manner. A purge treatment is carried out between the cleaning treatment and the subsequent film formation treatment, wherein the purge treatment comprises supplying the monosilane gas and the inert gas for a predetermined period to purge any fluoride, which is a compound produced by the cleaning treatment, from the film formation chamber (13a, 13b).</p> |
