| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory inspection device that obtains the line fail count at high speed, thereby improving an inspection efficiency. <P>SOLUTION: A memory inspection device includes a line fail counter counting the number of fails in lines of a memory cell of DUT stored in a fail memory. The line fail counter has fail memories allocated to regions divided in a two-dimensional matrix form of two-dimensional direction while they are connected in series along each line direction, and the fail memory is constituted of a plurality of basic units for counting simultaneously the number of fails in each of the regions. <P>COPYRIGHT: (C)2011,JPO&INPIT |
