| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the following problems: when a silver thin film with high uniformity is aggregated by heat treatment to form unevenness, the thin silver film aggregates to one place due to temperature or a surface state, so that regions where the thin silver film is lost and a place where silver concentrates in "an aggregated state" may be formed; and thereby an irregular reflection region as an original purpose is not formed to produce a defective. <P>SOLUTION: After the lamination of a polycrystalline ITO layer 20a and the formation of a resist mask by a photolithography process, the polycrystalline ITO layer 20a is etched using, for example, a hydrochloric acid-based etchant. A part covered with the resist mask functions as a wiring layer. In this case, the etching selectively advances from a grain boundary, and the grain of a specific plane orientation remains, so that a residue 20b functioning as an etching mask is formed. A texture structure can be obtained by dry etching of a second interlayer dielectric 19 using the residue 20b as the mask. <P>COPYRIGHT: (C)2011,JPO&INPIT |
