WRITING METHOD IN CHARGE TRAPPING MEMORY DEVICE, ERASING METHOD, AND CHARGE TRAPPING MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a charge trapping memory device having high rewriting resistance.

SOLUTION: The charge trapping memory device is constituted so that a tunnel oxide film, a charge trap film, a blocking insulating film, and a gate electrode are laminated in order on a silicon substrate, and a voltage of one of poles is applied to the gate electrode to trap charges supplied from the silicon substrate in the charge trap film, thereby writing information, and the voltage of the other pole is applied to the gate electrode to pull out the charges trapped in the charge trap film, thereby erasing information. A film thickness of the tunnel oxide film is equal to or less than 3 nm.

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