PLASMA TREATMENT APPARATUS, METHOD FOR FORMING FILM, AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of forming a homogeneous film of good quality.

SOLUTION: The plasma treatment apparatus is configured such that: an upper electrode has projected portions provided with first introduction holes and recessed portions provided with second introduction holes; the first introduction hole of the upper electrode is connected to a first cylinder filled with a gas which is not likely to be dissociated; the second introduction hole is connected to a second cylinder filled with a gas which is likely to be dissociated; the gas which is not likely to be dissociated is introduced into a reaction chamber from an introduction port of the first introduction hole provided on a surface of the projected portion of the upper electrode; and the gas which is likely to be dissociated is introduced into the reaction chamber from an introduction port of the second introduction hole provided on a surface of the recessed portion.

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