APPARATUS FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, SUSCEPTOR FOR USE IN MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To prevent the occurrence of variations in the quality of a raw material wafer in an annealing step after an ion implantation of the raw material wafer made from silicon carbide (SiC). SOLUTION: In the annealing step, an ion implantation surface of the raw material wafer and a dummy wafer made from single crystal silicon carbide are spaced from each other and are opposed to each other. The raw material wafer is heated by a heating means installed in the surface side in which the ion of the raw material wafer is not implanted, and the dummy wafer is heated by a heating means installed in the surface side which are not opposed to the raw material wafer of the dummy wafer. Contamination of the raw material wafer and abnormal composition ratio of the surface are prevented and the raw material wafer can be heated more uniformly, so that surface roughness of the raw material wafer is suppressed more effectively, thereby the occurrence of variations in the quality of the raw material wafer can be prevented. COPYRIGHT: (C)2011,JPO&INPIT