SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve the characteristics of a device while reducing the contact resistance of ohmic electrodes installed in a group III-V nitride semiconductor. SOLUTION: The semiconductor device (HFET) includes: a first nitride semiconductor layer 13 formed on a SiC substrate 11 through a buffer layer 12; a second nitride semiconductor layer 14 formed on the first nitride semiconductor layer 13 to generate a two-dimensional electronic gas layer on the upper part of the first nitride semiconductor layer 13; and electrodes 16, 17 selectively formed on the second nitride semiconductor layer 14 and having ohmic properties. The second nitride semiconductor layer 14 has a contact part 14a having an inclination part of which the bottom or wall surface is included to a substrate surface and having a concave cross-section, and the electrodes 16, 17 having the ohmic properties are formed in the contact part 14a. COPYRIGHT: (C)2011,JPO&INPIT