SILICON CARBIDE SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To suppress an increase in on-resistance resulting from stacking fault by inhibiting stacking fault generated during epitaxial growth in a semiconductor device. SOLUTION: The semiconductor device is manufactured by a manufacturing method including: (A) a step of increasing the temperature of a silicon carbide substrate by heating the silicon carbide substrate; (B) a step of supplying gas containing carbon to the surface of the silicon carbide substrate whose temperature is increased; and (C) a step of forming an epitaxial layer of silicon carbide on the surface of the silicon carbide substrate by supplying gas containing silicon and the gas containing carbon to the surface of the silicon carbide substrate whose temperature is increased, after the step B. COPYRIGHT: (C)2011,JPO&INPIT