| 摘要 |
A method of forming Monolithic CMOS-MEMS hybrid integrated, packaged structures includes the steps of providing: providing a semiconductor substrate with pre-fabricated cmos circuits on the front side and a polished back-side with through substrate conductive vias; forming at least one opening in the polished backside of the semiconductor substrate by appropriately protecting the front-side; applying at least one filler material in the at least one opening on the semiconductor substrate; positioning at least one prefabricated mems, nems or cmos chip on the filler material, the chip including a front face and a bare back face with the prefabricated mems/nems chips containing mechanical and dielectric layers; applying at least one planarization layer overlying the substrate, filler material and the chip; forming at least one via opening on a portion of the planarization layer interfacing pads on the chip and the through substrate conductive vias; applying at least one metallization layer overlying the planarization layer on the substrate and the chip connecting the through substrate conductive vias to the at least one chip; applying at least one second insulating layer overlying the metallization layer; performing at least one micro/nano fabrication etching step to release the mechanical layer on the prefabricated mems/nems chips; positioning protective cap to package the integrated device over the mems/nems device area on the pre-fabricated chips.
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