METHOD FOR FORMING A GAPLESS SEMICONDUCTOR THIN FILM
摘要
The present invention relates to a method for forming a gapless semiconductor thin film. The method comprises the steps of: providing a lead palladium oxide target; arranging the lead palladium oxide target in a vacuum container, and providing a substrate; and forming a lead palladium oxide thin film on the substrate using the lead palladium oxide target.
申请公布号
WO2011013961(A2)
申请公布日期
2011.02.03
申请号
WO2010KR04882
申请日期
2010.07.26
申请人
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION SOGANGUNIVERSITY;JUNG, MYUNG-HWA;INDUSTRY-UNIVERSITY COOPERATION FOUNDATION SOGANGUNIVERSITY
