SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a semiconductor device for large current, which has a simple structure and is provided with a bypass protection unit against surge voltages or the like. The semiconductor device has good withstand voltage performance and low on-resistance (low on-voltage). Also disclosed is a method for manufacturing the semiconductor device. The semiconductor device is characterized by comprising an n+ GaN substrate (1) which has a GaN layer that makes an ohmic contact with a supporting base, an FET which is formed on a first region (R1) and has an n- GaN drift layer (2), and an SBD which is formed on a second region (R2) and has an anode electrode that makes a Schottky contact with the n- GaN drift layer (2). The semiconductor device is also characterized in that the FET and the SBD are arranged side by side and the rear surface of the n+ GaN substrate (1) is provided with a drain electrode (D) of the FET and a cathode electrode (C) of the SBD.