| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device operating at a high speed while having a resistive element of small variation in a value of resistance and excellent in characteristics, and also to provide a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device is equipped with: an element isolation region 12 formed in a semiconductor substrate 11; a first active region 13A; a second active region 13B; a first conductivity type MIS transistor formed on the first active region 13A and having a first conductivity type gate electrode 16A comprising silicon in which a first conductivity type impurity is introduced; a second conductivity type MIS transistor formed on the second active region 13B and having a second conductivity type gate electrode 16B comprising silicon in which a second conductivity type impurity is introduced; and a p-type resistor 16D formed on the element isolation region 12, comprising silicon in which a p-type impurity is introduced, and having a value of resistance larger than those of the n-type gate electrode 16A and the p-type gate electrode 16B. COPYRIGHT: (C)2011,JPO&INPIT
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