| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that uniformizes device characteristics by a simple process, and to provide a semiconductor integrated circuit device. SOLUTION: The method of manufacturing the semiconductor device includes: a LOCOS oxide film forming step of forming a LOCOS oxide film 70 in a prescribed region 41 on the surface of a semiconductor substrate 40; a polysilicon forming step of forming a polysilicon film 90 so as to cover the boundary between the LOCOS oxide film 70 and the surface of the semiconductor substrate 40; and an ion implantation step in which ions are implanted into the surface of the semiconductor substrate 40 while using the polysilicon film 90 as a mask so as to form an impurity region 60 on the surface of the semiconductor substrate 40. COPYRIGHT: (C)2011,JPO&INPIT
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