| 摘要 |
PROBLEM TO BE SOLVED: To provide a flexible semiconductor device having superior productivity. SOLUTION: A method of manufacturing the flexible semiconductor device 100 includes: a process (a) of preparing a flexible substrate 10 having a first copper layer 23 formed on a surface 12a; a process (b) of forming a gate electrode 20g on the surface 12a of the flexible substrate 10 by performing the patterning of the first copper layer 23; a process (c) of forming, by transfer, an insulating layer 30, having adhesiveness at least on a surface, on the surface 12a of the flexible substrate 10; a process (d) of laminating a second copper layer 25 on the insulating layer 30 of the surface 12a in the flexible substrate 10; and a process (e) of forming a source electrode 20s and a drain electrode 20d by performing the patterning of the second copper layer 25 on the surface 12a of the flexible substrate 10. COPYRIGHT: (C)2011,JPO&INPIT
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