METHOD AND APPARATUS FOR CONTROLLING FORMATION OF DEPOSIT IN DEPOSITION SYSTEM AND DEPOSITION SYSTEM AND METHOD INCLUDING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method and a system which can suppress parasitic deposits upon deposition of a film on a substrate. SOLUTION: Parasitic deposits are controlled in a deposition system (100) for depositing a film on a substrate (20), the deposition system of the type defining a reaction chamber for receiving the substrate and including a process gas (P) in the reaction chamber and an interior surface contiguous with the reaction chamber. Such control is provided by making a buffer gas (B) to flow between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas. COPYRIGHT: (C)2011,JPO&INPIT