| 摘要 |
A method for manufacturing a compound semiconductor device includes forming a first compound semiconductor layer over a first substrate, the first compound semiconductor layer containing AlxGa1-xN (0≦̸x<1) having a first band gap; forming a second compound semiconductor layer over the first compound semiconductor layer, the second compound semiconductor layer containing AlyInzGa1-y-zN (0<y<1, 0<y+z≦̸1) having a second band gap larger than the first band gap; forming a compound semiconductor laminated structure over the second compound semiconductor layer; and removing the first compound semiconductor layer while irradiating the first compound semiconductor layer with light having an energy between the first band gap and the second band gap, separating the first substrate from the compound semiconductor laminated structure.
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