发明名称 |
BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD |
摘要 |
A bipolar semiconductor device and method are provided. One embodiment provides a bipolar semiconductor device including a first semiconductor region of a first conductivity type having a first doping concentration, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, and a plurality of third semiconductor regions of the first conductivity type at least partially arranged in the first semiconductor region and having a doping concentration which is higher than the first doping concentration. Each of the third semiconductor regions is provided with at least one respective junction termination structure.
|
申请公布号 |
US2011024791(A1) |
申请公布日期 |
2011.02.03 |
申请号 |
US20090512285 |
申请日期 |
2009.07.30 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
SCHULZE HANS-JOACHIM;PFIRSCH FRANK;NIEDEMOSTHEIDE FRANZ-JOSEF |
分类号 |
H01L29/70;H01L21/8222;H01L29/861 |
主分类号 |
H01L29/70 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|