发明名称 INSULATING SUBSTRATE, INSULATING CIRCUIT BOARD, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE INSULATING SUBSTRATE, AND METHOD OF MANUFACTURING THE INSULATING CIRCUIT BOARD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an insulating substrate excellent in heat dissipation characteristics and capable of preventing thermal stress from working to a semiconductor element while a temperature cycle is loaded, an insulating circuit board and a semiconductor device using the insulating substrate, as well as a method for manufacturing the insulating substrate and a method for manufacturing the insulating circuit board. <P>SOLUTION: The insulating substrate 10 includes a substrate body 11 made of a metallic base composite material and an insulative film 15 formed on one of surfaces of the substrate body 11. A thermal expansion coefficient of the substrate body 11 from a room temperature to 200°C is set to be 10×10<SP>-6</SP>/°C or lower, heat conductivity is set to be 190 W/(m×K) or higher, and transverse strength is set to be 30 MPa or higher. The insulative film 15 is formed by colliding powder of an insulative material against one of surfaces of the substrate body 11. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011023475(A) 申请公布日期 2011.02.03
申请号 JP20090165904 申请日期 2009.07.14
申请人 MITSUBISHI MATERIALS CORP 发明人 NAGASE TOSHIYUKI;NAGATOMO YOSHIYUKI;KUROMITSU YOSHIO
分类号 H01L23/14;H01L23/12;H05K1/05;H05K3/44 主分类号 H01L23/14
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