| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for reducing forward resistance by utilizing an included pn junction diode, with respect to a diode having a p-type semiconductor region formed on a portion of a surface of an n-type semiconductor region. SOLUTION: The diode includes: the n-type semiconductor region 22; the p-type semiconductor region 14 formed on a portion of the surface of the n-type semiconductor region 22; an anode electrode 2 (surface electrode) which is in contact with the surface of the n-type semiconductor region 22 and the surface of the p-type semiconductor region 14 and makes a Schottky junction Jb to the surface of at least the n-type semiconductor region 22, and an insulation region 30 having a right side surface 30b (first side surface) and a left side surface 30a (second side surface) being in contact with the n-type semiconductor region 22. The right side surface 30b faces a second n-type semiconductor region 22b disposed below the Schottky junction Jb, and the left side surface 30a faces a first n-type semiconductor region 22a disposed below the pn junction 13 between the n-type semiconductor region 22 and the p-type semiconductor region 14. COPYRIGHT: (C)2011,JPO&INPIT |
