发明名称 |
VAPOR PHASE GROWTH DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase growth device of a rotation/revolution type which keeps a flow rate of a purge gas or a raw material gas constant at a time when a direction in which the raw material gas is introduced and a direction in which a susceptor rotation is introduced are set to be the same direction. SOLUTION: In a hollow drive shaft 12 that supports and rotates a disc-shaped susceptor, a raw material gas supply tube 20 is coaxially disposed, and between the hollow drive shaft and the raw material gas supply tube, a purge gas flow path 21 is formed. A gas introduction path 19c at a purge gas introduction nozzle that introduces the purge gas from the purge gas flow path to an outer circumferential direction of a flow channel 18 is formed in a direction parallel to the upper surface of the susceptor with a vertical dimension thereof constant. COPYRIGHT: (C)2011,JPO&INPIT
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申请公布号 |
JP2011023519(A) |
申请公布日期 |
2011.02.03 |
申请号 |
JP20090166831 |
申请日期 |
2009.07.15 |
申请人 |
TAIYO NISSAN EMC KK;TAIYO NIPPON SANSO CORP |
发明人 |
MATSUMOTO ISAO;UCHIYAMA KOOSUKE;YAMAGUCHI AKIRA |
分类号 |
H01L21/205;C23C16/455;C23C16/46 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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