发明名称 VAPOR PHASE GROWTH DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a vapor phase growth device of a rotation/revolution type which keeps a flow rate of a purge gas or a raw material gas constant at a time when a direction in which the raw material gas is introduced and a direction in which a susceptor rotation is introduced are set to be the same direction. SOLUTION: In a hollow drive shaft 12 that supports and rotates a disc-shaped susceptor, a raw material gas supply tube 20 is coaxially disposed, and between the hollow drive shaft and the raw material gas supply tube, a purge gas flow path 21 is formed. A gas introduction path 19c at a purge gas introduction nozzle that introduces the purge gas from the purge gas flow path to an outer circumferential direction of a flow channel 18 is formed in a direction parallel to the upper surface of the susceptor with a vertical dimension thereof constant. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011023519(A) 申请公布日期 2011.02.03
申请号 JP20090166831 申请日期 2009.07.15
申请人 TAIYO NISSAN EMC KK;TAIYO NIPPON SANSO CORP 发明人 MATSUMOTO ISAO;UCHIYAMA KOOSUKE;YAMAGUCHI AKIRA
分类号 H01L21/205;C23C16/455;C23C16/46 主分类号 H01L21/205
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