SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要
A semiconductor device having a structure which enables sufficient reduction in parasitic capacitance is provided. In addition, the operation speed of thin film transistors in a driver circuit is improved. In a bottom-gate thin film transistor in which an oxide insulating layer is in contact with a channel formation region in an oxide semiconductor layer, a source electrode layer and a drain electrode layer are formed in such a manner that they do not overlap with a gate electrode layer. Thus, the distance between the gate electrode layer and the source electrode layer and between the gate electrode layer and the drain electrode layer are increased; accordingly, parasitic capacitance can be reduced.
申请公布号
WO2011013502(A1)
申请公布日期
2011.02.03
申请号
WO2010JP61734
申请日期
2010.07.06
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YAMAZAKI, SHUNPEI;TSUBUKU, MASASHI;AKIMOTO, KENGO;HOSOBA, MIYUKI;SAKATA, JUNICHIRO