| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device for suppressing increase of a chip size, and preventing the deterioration of a readout margin. <P>SOLUTION: A first conductive type first well 12 is formed in a substrate 11. A second conductive type second well 13 is formed in the first well 12. A plurality of memory cells MC and a plurality of first and second bit line selection transistors 14e, 14o, 15e, and 15o are formed in the second well 13, and the plurality of first and second bit line selection transistors 14e, 14o, 15e, and 15o are arranged on a side of the sense amplifier 17 with respect to the plurality of memory cells MC of the plurality of bit lines BLe and BLo. <P>COPYRIGHT: (C)2011,JPO&INPIT |
