| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of fabricating a semiconductor device having the columnar structure of a single-crystal structure. <P>SOLUTION: The method of forming the columnar structure of single crystal on a semiconductor substrate includes steps of: forming an insulating film on the semiconductor substrate; forming a groove on the insulating film to expose at least a portion of the semiconductor substrate at the bottom of the groove; forming an embedding film including at least germanium in the groove; melting the embedding film by heat treatment; and crystallizing the embedding film having been melted by using the semiconductor substrate as a seed. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
