| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method for stably forming a highly precise fine pattern that is used for a semiconductor manufacturing process, manufacture of a liquid crystal or a circuit board such as a thermal head, and other photofabrication process, or the like. <P>SOLUTION: In the pattern forming method, a resist film with a receding contact angle against water of not less than 70 degrees is formed by applying a resist composition for negative development, which contains a resin with polarity increased by acid action, and in which the solubility to a positive type developer being an alkali developer is increased by irradiation of an active ray or radiation, and the solubility to a negative developer containing an organic solvent is decreased. Then, the resist film is exposed through an immersion medium, and developed by using the negative developer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
