| 摘要 |
PROBLEM TO BE SOLVED: To remove an insulating film and a natural oxide film formed on a hole bottom surface without damaging the gate insulating film 10 nor lowering mobility in a method of manufacturing a vertical MISFET in which a channel portion 12 is formed after a gate electrode 7 is formed. SOLUTION: The method of manufacturing the semiconductor device includes: forming a laminate in which first insulating layers 4 and 5, a gate electrode layer 7 and second insulating layers 5 and 4, are laminated in this order, on an impurity region 8 formed in a single-crystal semiconductor substrate 1 or single-crystal semiconductor layer; forming a hole where the impurity region 8 is exposed in the laminate; forming the insulating film 10 on the gate electrode layer 7 exposed at least from a side wall of the hole and the impurity region 8 exposed from a bottom surface of the hole; forming a semiconductor film overlaying the insulating film 10 formed on an exposed part of the gate electrode layer 7; removing the insulating film formed on the impurity region 8; and forming a semiconductor part which contacts the impurity region 8 exposed from the bottom surface of the hole and continuing from the hole bottom surface to an opening of the hole. COPYRIGHT: (C)2011,JPO&INPIT
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