发明名称 APPARATUS FOR ATOMIC LAYER DEPOSITION
摘要 An apparatus for atomic layer deposition of a material on a moving substrate comprises a conveying arrangement for moving a substrate along a predetermined planar or curved path of travel and a coating bar having at least one precursor delivery channel. The precursor delivery channel conducts a fluid containing a material to be deposited on a substrate toward the path of travel. When in use, a substrate movable along the path of travel defines a gap between the outlet end of the precursor delivery channel and the substrate. The gap defines an impedance Zg to a flow of fluid from the precursor delivery channel. A flow restrictor is disposed within the precursor delivery channel that presents a predetermined impedance Zfc to the flow therethrough. The restrictor is sized such that the impedance Zfc is at least five (5) times, and more preferably at least fifteen (15) times, the impedance Zg. The impedance Zfc has a friction factor f. The restrictor in the precursor delivery channel is sized such that the impedance Zfc has a friction factor f that is less than 100, and preferably less than 10.
申请公布号 US2011023775(A1) 申请公布日期 2011.02.03
申请号 US20090550706 申请日期 2009.08.31
申请人 E.I. DU PONT DE NEMOURS AND COMPANY 发明人 NUNES GEOFFREY;KINARD RICHARD DALE
分类号 B05C11/00;B05C13/00 主分类号 B05C11/00
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