FINE-STRUCTURE MANUFACTURING METHOD

摘要

Provided is a fine-structure manufacturing method that enables making deep and thin fine-structures on GaN-type semiconductors, with precision. The fine-structure manufacturing method is a method for forming fine structures on semiconductors, and is configured to be provided with: a first process wherein a first GaN-type semiconductor layer is formed on a substrate; a second process wherein a first pore is formed on the aforementioned first GaN-type semiconductor layer that was formed in the aforementioned first process, using etching; and a third process wherein heat treatment is conducted, in an gas atmosphere containing nitrogen, and with a temperature of not less than 850°C and not more than 950°C, to form a second pore that is made by having the diameter of the aforementioned first pore, formed in the aforementioned second process, made to be narrower in the in-plane direction of the aforementioned substrate.