SEMICONDUCTOR DEVICE PRODUCTION APPARATUS AND SEMICONDUCTOR DEVICE PRODUCTION METHOD

摘要

A silicon substrate is placed in a film formation chamber, wherein the silicon substrate is covered with an insulating layer so that an N-type and P-type impurities diffusion area can be exposed on the silicon substrate through a contact hole formed in the insulating layer. A tungsten hexafluoride gas and a monosilane gas are supplied to the film formation chamber to form a thin tungsten film selectively on the N-type and P-type impurities diffusion area. Prior to this film formation treatment, the monosilane gas is supplied to the film formation chamber to cause the adsorption of the monosilane gas onto the N-type and P-type impurities diffusion area. Subsequently, the tungsten hexafluoride gas is supplied to the film formation chamber so that the partial pressure of the tungsten hexafluoride gas in the film formation chamber becomes higher than that of the monosilane gas. In this manner, the film formation treatment is achieved.