| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain an MTJ nanopillar structure that meets the requirements for designing a 64 Mb STT-RAM having a thermal stability, a writing voltage, a read-out voltage and a coercivity Hc, while reducing a critical inversion current density J<SB>CO</SB>to the minimum. <P>SOLUTION: An MgO tunnel barrier layer is formed by using natural oxidation, the barrier layer containing an oxygen surfactant layer. A free layer 40 includes an FL1 layer 50, an NCC layer 51, and an FL2 layer 52. The NCC layer 51 contains a nano-conductive channel 51a consisting of RM particles formed in an SiO matrix 51b, wherein R is Co, Fe or Ni, and M is Si, Al or the like. The thickness of the NCC layer 51 is maintained around the thickness of the minimum grain size of RM particles, and has a diameter long enough to cover the distance between the FL1 layer 50 and the FL2 layer 52. <P>COPYRIGHT: (C)2011,JPO&INPIT |
