GALLIUM NITRIDE-BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor optical device capable of preventing the deterioration of light emission characteristics caused by indium segregation in an active layer.

SOLUTION: In the GaN-based semiconductor optical device 11a, the principal plane 13a of a template 13 tilts from a surface perpendicular to a reference axis Cx that extends along the c-axis of this first GaN-based semiconductor in the direction of the m-axis of the first GaN-based semiconductor with the tilt angle in the range of ≥63 degrees and less than 80 degrees. A GaN-based based semiconductor epitaxial region 15 is formed on the principal plane 13a. An active layer 17 is formed on the GaN-based based semiconductor epitaxial region 15. The active layer 17 includes at least one semiconductor epitaxial layer 19 composed of InGaN. The direction of the film thickness of the semiconductor epitaxial layer 19 tilts toward the reference axis Cx. This reference axis Cx is directed toward the direction of the axis [0001] of the first GaN-based semiconductor.

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