| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an element technique for increasing a luminous intensity of deep ultraviolet light while using an AlGaInN-based material and especially an AlGaN-based material as the material of a luminous layer. <P>SOLUTION: An AlN layer is first grown directly on a sapphire surface. The AlN layer is grown under an NH<SB>3</SB>-rich condition. A sequence of TMAl pulse supply is carried out to grow the AlGaN layer for 10 seconds and then to suspend the growth for 5 seconds to remove NH<SB>3</SB>. Subsequently, 1 sccm of TMAl is introduced for 5 seconds. Thereafter, the growth is again suspended for 5 seconds. The sequence is counted as one period and is repeated to grow the layer by an amount corresponding to 5 periods. Such growth enables the layer to have an Al-rich polarity. The sequence is given as an example and can be modified in various ways. The Al polarity can be obtained by a step of repeating the growth suspension and the Al source supply. <P>COPYRIGHT: (C)2011,JPO&INPIT |
