| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for plotting a pattern of a photomask in which the dimensional change and fluctuation of the pattern according to in-plane positions of the photomask can be corrected and a dimensional change caused by a PED (post exposure delay) in a vacuum can also be corrected during plotting work from a start to a finish. <P>SOLUTION: The method for plotting the pattern of the photomask is characterized in that, when the pattern of the photomask is plotted by electron beams such offset correction is performed according to a lapsed time since the plotting work is started that an offset value added to the shot size of an electron beam plotting apparatus is increased or decreased gradually, and the pattern is plotted while changing a shot size. <P>COPYRIGHT: (C)2011,JPO&INPIT |
