METHODS AND APPARATUS FOR MEASURING ION IMPLANT DOSE

摘要

Methods and apparatus for measuring ion implant dose in a material (120) provide for: measuring a reflection spectrum through an implantation surface (121) of the material, the implantation surface having been subjected to an ion implantation process to create a material layer (122) from the implantation surface (121) to a depth within the material and a layer of weakness (123) below the material layer; storing magnitudes of the reflection spectrum as a function of respective wavelengths of incident light on the implantation surface (121); and computing an ion implant dose used during the ion implantation process based on comparisons of at least two magnitudes of the reflection spectrum at at least two corresponding wavelengths of the incident light.