| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which when the same kind of a semiconductor material as that of a semiconductor layer is used as a substrate for growing the semiconductor layer making up a semiconductor element structure, allow a recognizable alignment mark to be formed at the time of a light exposure process following the growth of the semiconductor layer. <P>SOLUTION: On a substrate 101 made of a material transparent to a light source for alignment mark detection, a second alignment mark 120, which is made of a material having a refraction factor different from that of the substrate 101 is formed. Subsequently, a GaN-based epitaxial layer containing an active layer 105 is formed on the substrate 101 to fill the second alignment mark 120. Then, light exposure alignment to the GaN-based epitaxial layer is carried out referring to the second alignment mark 120. <P>COPYRIGHT: (C)2011,JPO&INPIT |
