发明名称 METHOD OF MANUFACTURING PHOTOVOLTAIC ELEMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a photovoltaic element that reduces a deterioration in characteristics due to an undesired reach of a layer and reduces an ineffective part. <P>SOLUTION: The method of manufacturing the photovoltaic element including an n-type semiconductor substrate, an amorphous or microcrystalline n-type semiconductor layer provided on the semiconductor substrate, and an amorphous or microcrystalline p-type semiconductor layer provided on the semiconductor substrate includes a process of forming the p-type semiconductor layer after a process of forming the n-type semiconductor layer. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011023758(A) 申请公布日期 2011.02.03
申请号 JP20100245874 申请日期 2010.11.02
申请人 SANYO ELECTRIC CO LTD 发明人 HAGA TAKAHIRO;HIROSE KOICHI
分类号 H01L31/04 主分类号 H01L31/04
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