| 摘要 |
<p>Enhanced electrostatic discharge ("ESD") protection for an integrated circuit (950) is described. An embodiment relates generally to a circuit (950) for protection against ESD. The circuit (950) has an input/output node (401) and a driver (991, 992, 993, 994). The driver has a first transistor (991, 992) and a second transistor (992, 991). A first source/drain node of the first transistor (991, 992) is coupled to the input/output node (401). A second source/drain node of the first transistor (991, 992) forms a first interior node (465, 466) capable of accumulating charge when electrically floating. A first current flow control circuit (901, 902) is coupled to a discharge node (430, 431) and the second source/drain node of the first transistor (991, 992). The first current flow control circuit (901, 902) is electrically oriented in a bias direction for allowing accumulated charge to discharge from the first interior node (465, 466) via the first current flow control circuit (901, 902) to the discharge node (430, 431).</p> |
