发明名称 MAGNETIC MEMORY WITH POROUS NON-CONDUCTIVE CURRENT CONFINEMENT LAYER
摘要 A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.
申请公布号 US2011026321(A1) 申请公布日期 2011.02.03
申请号 US20100904254 申请日期 2010.10.14
申请人 SEAGATE TECHNOLOGY LLC 发明人 TANG MICHAEL XUEFEI;SUN MING;DIMITROV DIMITAR V.;RYAN PATRICK
分类号 G11C11/14;H01L21/00 主分类号 G11C11/14
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