SiC AVALANCHE PHOTODIODE WITH IMPROVED EDGE TERMINATION

摘要

An avalanche photodiode semiconductor device (20) for converting an impinging photon (22) includes a base n+ doped material layer (52) formed having a window section (72) for passing the photon (22). An n− doped material layer (30) is formed on the n+ doped material layer (52) having a portion of a lower surface (74) suitably exposed. An n+ doped material layer (32) is formed on the n− doped material (30). A p+ layer (24) formed on top of the n+ doped layer (32). At least one guard ring (26) is formed in the n− doped layer (30).