发明名称 |
BONDING WIRE FOR SEMICONDUCTOR |
摘要 |
Disclosed is a bonding wire for semiconductor, which ensures good wedge bonding even of palladium-plated lead frames and has excellent oxidation resistance, and in which copper or a copper alloy is used as a core wire. The bonding wire is characterized by comprising a core wire that comprises copper or a copper alloy, a coating layer that is arranged on the surface of the core wire, has a thickness of 10 to 200 nm and contains palladium, and an alloy layer that is arranged on the surface of the coating layer, has a thickness of 1 to 80 nm and contains a noble metal and palladium, wherein the noble metal is silver or gold, and the noble metal is contained in the alloy layer at a concentration of 10 to 75 vol% inclusive. |
申请公布号 |
WO2011013527(A1) |
申请公布日期 |
2011.02.03 |
申请号 |
WO2010JP62082 |
申请日期 |
2010.07.16 |
申请人 |
NIPPON STEEL MATERIALS CO., LTD.;NIPPON MICROMETAL CORPORATION;TERASHIMA, SHINICHI;UNO, TOMOHIRO;YAMADA, TAKASHI;ODA, DAIZO |
发明人 |
TERASHIMA, SHINICHI;UNO, TOMOHIRO;YAMADA, TAKASHI;ODA, DAIZO |
分类号 |
H01L21/60;C22C5/02;C22C5/04;C22C5/06 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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