| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem that characteristics of a photovoltaic element deteriorates due to a flaw, a stain etc., on the reverse interface of a substrate. <P>SOLUTION: The method of manufacturing the photovoltaic element includes a process of forming a second intrinsic semiconductor layer of intrinsic amorphous silicon or microcrystalline silicon on a top surface of a crystal-based semiconductor layer, and a process of forming a second conductivity type semiconductor layer of amorphous silicon or microcrystalline silicon of a conductivity type opposite from a first conductivity type on a second conductivity type semiconductor layer after a process of forming a first intrinsic semiconductor layer of intrinsic amorphous silicon or microcrystalline silicon on the reverse surface of the crystal-based semiconductor substrate and a process of forming a first conductivity type semiconductor layer of amorphous silicon or microcrystalline silicon of the first conductivity type on a first intrinsic semiconductor. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
