SEMICONDUCTOR DEVICE, RADIO FREQUENCY CIRCUIT, AND RADIO FREQUENCY POWER AMPLIFIER

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and a radio frequency circuit which are appropriate for multiband or multimode. SOLUTION: The semiconductor device with a field-effect transistor formed on a semiconductor substrate 301 includes ohmic electrodes 501a and 501b serving as source and drain electrodes of the field-effect transistor, Schottky electrodes 601a and 601c provided between the ohmic electrodes 501a and 501b to serve as gate electrodes of the field-effect transistor, and a Schottky electrode 601b provided between the Schottky electrodes 601a and 601c, wherein the Schottky electrode 601b is grounded. COPYRIGHT: (C)2011,JPO&INPIT