发明名称 Low Temperature Wafer Level Processing for MEMS Devices
摘要 Microelectromechanical systems (MEMS) are small integrated devices or systems that combine electrical and mechanical components. It would be beneficial for such MEMS devices to be integrated with silicon CMOS electronics and packaged in controlled environments and support industry standard mounting interconnections such as solder bump through the provisioning of through-wafer via-based electrical interconnections. However, the fragile nature of the MEMS devices, the requirement for vacuum, hermetic sealing, and stresses placed on metallization membranes are not present in packaging conventional CMOS electronics. Accordingly there is provided a means of reinforcing the through-wafer vias for such integrated MEMS-CMOS circuits by in filling a predetermined portion of the through-wafer electrical vias with low temperature deposited ceramic materials which are deposited at temperatures below 350° C., and potentially to below 250° C., thereby allowing the re-inforcing ceramic to be deposited after fabrication of the CMOS electronics.
申请公布号 US2011027930(A1) 申请公布日期 2011.02.03
申请号 US20090922224 申请日期 2009.03.11
申请人 THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING/MCGILL UNIVERSITY 发明人 EL-GAMAL MOURAD;LEMOINE DOMINIQUE;CICEK PAUL-VAHE;NABKI FREDERIC
分类号 H01L21/50;H01L21/30 主分类号 H01L21/50
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