发明名称 NANO-PATTERNED SUBSTRATE AND EPITAXIAL STRUCTURE
摘要 A nano-patterned substrate includes a plurality of nano-particles or nanopillars on an upper surface thereof. A ratio of height to diameter of each of the nano-particles or each of the nanopillars is either greater than or equal to 1. Particularly, a ratio of height to diameter of the nanopillars is greater than or equal to 5. Each of the nano-particles or each of the nanopillars has an arc-shaped top surface. When an epitaxial growth process is applied onto the nano-patterned substrate to form an epitaxial layer, the epitaxial layer has very low defect density. Thus, a production yield of fabricating the subsequent device can be improved.
申请公布号 US2011024880(A1) 申请公布日期 2011.02.03
申请号 US20100846364 申请日期 2010.07.29
申请人 EPISTAR CORPORATION;SINO-AMERICAN SILICON PRODUCTS.INC. 发明人 LI ZHEN-YU;CHIU CHING-HUA;KUO HAO-CHUNG;LU TIEN-CHANG
分类号 H01L29/06;H01L21/20 主分类号 H01L29/06
代理机构 代理人
主权项
地址