发明名称 Power Semiconductor Component Including a Potential Probe
摘要 A power semiconductor component including a semiconductor body and two load terminals is provided. Provided furthermore is a potential probe positioned to tap an electric intermediate potential of the semiconductor body at a tap location of the semiconductor body for an electric voltage applied across the two load terminals, the intermediate potential being intermediate to the electric potentials of the two load terminals, but differing from each of the two electric potentials of the two load terminals.
申请公布号 US2011025406(A1) 申请公布日期 2011.02.03
申请号 US20100844289 申请日期 2010.07.27
申请人 INFINEON TECHNOOGIES AG 发明人 KANSCHAT PETER
分类号 H03K3/01;H01L23/538;H01L23/544 主分类号 H03K3/01
代理机构 代理人
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