发明名称 |
ETCH METHOD IN THE MANUFACTURE OF AN INTEGRATED CIRCUIT |
摘要 |
The present invention provides a method for etching a substrate in the manufacture of a semiconductor device, the method comprising contacting a surface of the substrate with ions extracted from a plasma formed from a gas comprising one or more of an oxygen-containing species, a nitrogen-containing species and an inert gas, and separately contacting the surface of the substrate with a plasma formed from a gas comprising a fluorine-containing species.
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申请公布号 |
US2011027999(A1) |
申请公布日期 |
2011.02.03 |
申请号 |
US20100377348 |
申请日期 |
2010.07.09 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
SPARKS TERRY G.;SHAHID RAUF |
分类号 |
H01L21/465 |
主分类号 |
H01L21/465 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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