发明名称 METHOD FOR FABRICATING COPPER-CONTAINING TERNARY AND QUATERNARY CHALCOGENIDE THIN FILMS
摘要 An apparatus for depositing a solid film onto a substrate from a reagent solution includes reservoirs of reagent solutions maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solutions. The chilled solutions are dispensed through showerheads, one at a time, onto a substrate. One of the showerheads includes a nebulizer so that the reagent solution is delivered as a fine mist, whereas the other showerhead delivers reagent as a flowing stream. A heater disposed beneath the substrate maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solutions may be initiated. Each reagent solution contains at least one metal and either S or Se, or both. At least one of the reagent solutions contains Cu. The apparatus and its associated method of use are particularly suited to forming films of Cu-containing compound semiconductors.
申请公布号 WO2011014245(A2) 申请公布日期 2011.02.03
申请号 WO2010US02104 申请日期 2010.07.27
申请人 OLADEJI, ISAIAH, O. 发明人 OLADEJI, ISAIAH, O.
分类号 C23C18/12 主分类号 C23C18/12
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